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Volume 7 Issue 1
Jan.  2020

IEEE/CAA Journal of Automatica Sinica

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Article Contents
Yifei Pu and Bo Yu, "A Large Dynamic Range Floating Memristor Emulator With Equal Port Current Restriction," IEEE/CAA J. Autom. Sinica, vol. 7, no. 1, pp. 237-243, Jan. 2020. doi: 10.1109/JAS.2019.1911849
Citation: Yifei Pu and Bo Yu, "A Large Dynamic Range Floating Memristor Emulator With Equal Port Current Restriction," IEEE/CAA J. Autom. Sinica, vol. 7, no. 1, pp. 237-243, Jan. 2020. doi: 10.1109/JAS.2019.1911849

A Large Dynamic Range Floating Memristor Emulator With Equal Port Current Restriction

doi: 10.1109/JAS.2019.1911849
Funds:  This work was supported by the National Key Research and Development Program of China (2018YFC0830300), the National Natural Science Foundation of China (61571312), and the Science and Technology Support Project of Chengdu PU Chip Science and Technology Co., Ltd
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  • In this paper, a large dynamic range floating memristor emulator (LDRFME) with equal port current restriction is proposed to be achieved by a large dynamic range floating voltage-controlled linear resistor (VCLR). Since real memristors have not been largely commercialized until now, the application of a LDRFME to memristive systems is reasonable. Motivated by this need, this paper proposes an achievement of a LDRFME based on a feasible transistor model. A first circuit extends the voltage range of the triode region of an ordinary junction field effect transistor (JFET). The idea is to use this JFET transistor as a tunable linear resistor. A second memristive non-linear circuit is used to drive the resistance of the first JFET transistor. Then those two circuits are connected together and, under certain conditions, the obtained " resistor” presents a hysteretic behavior, which is considered as a memristive effect. The electrical characteristics of a LDRFME are validated by software simulation and real measurement, respectively.

     

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    Highlights

    • Although some memristor emulators are designed without grounded restriction, their input current cannot be guaranteed to be equal to the output current. In addition, the scope of applications of this Neuro-Bit memristor, which is currently the only memristor commercially available, are somewhat limited by its relatively small dynamic range of maximum ratings. Therefore, to solve these problems, this paper proposes an achievement of a large dynamic range floating memristor emulator with equal port current restriction based on a feasible transistor model.
    • The proposed large dynamic range floating memristor emulates the behavior and operates in nearly the exact way as that of a memristor, making it a feasible candidate for the floating memristor emulator. The electrical characteristics of a large dynamic range floating memristor emulator are validated by software simulation and real measurement, respectively. To enlarge the scope of application, it is designed to be feasible to convert between two-port ordinary memristor and three-port mirror one.
    • Some electrical characteristics of the large dynamic range floating memristor emulator, such as low implementation cost, low-sensitive to electrostatic discharge, freely accessible floating circuit element, large dynamic range of maximum ratings, and feasible conversion between two-port ordinary memristor and three-port mirror one, are its major advantages when compared with the Neuro-Bit memristor and other memristor emulators.

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